SiC Substrate
Tsanangudzo
Silicon carbide (SiC) ibhinari komboni yeBoka IV-IV, ndiyo yega yakagadzikana yakasimba muboka IV yePeriodic Table, Iyo yakakosha semiconductor.SiC ine yakanakisa kupisa, mechanical, makemikari uye magetsi zvivakwa, izvo zvinoita kuti ive imwe yezvakanakisa zvinhu zvekugadzira-yepamusoro-tembiricha, yakakwirira-frequency, uye yakakwirira-simba magetsi emagetsi, iyo SiC zvakare inogona kushandiswa se substrate zvinhu. yeGaN-based blue light-emitting diodes.Parizvino, 4H-SiC ndiyo yakajairwa zvigadzirwa pamusika, uye mhando yekufambisa yakakamurwa kuita semi-insulating mhando uye N mhando.
Properties
| Item | 2 inch 4H N-mhando | ||
| Diameter | 2inch (50.8mm) | ||
| Ukobvu | 350+/-25um | ||
| Orientation | kubva paaxis 4.0˚ yakananga <1120> ± 0.5˚ | ||
| Yekutanga Flat Oriental | <1-100> ± 5° | ||
| Secondary Flat Orientation | 90.0˚ CW kubva kuPrimary Flat ± 5.0˚, Si Takatarisana kumusoro | ||
| Primary Flat Length | 16 ± 2.0 | ||
| Secondary Flat Length | 8 ± 2.0 | ||
| Giredhi | Giredhi rekugadzira (P) | Gwaro rekutsvakurudza (R) | Dummy giredhi (D) |
| Resistivity | 0.015~0.028 Ω·cm | <0.1 Ω·cm | <0.1 Ω·cm |
| Micropipe Density | ≤ 1 maikoropipe/cm² | ≤ 1 0micropipes/cm² | ≤ 30 maikoropipe/cm² |
| Kukasharara Kwepamusoro | Si face CMP Ra <0.5nm, C Face Ra <1 nm | N/A, inoshandisika nzvimbo > 75% | |
| TTV | <8 um | <10um | <15 um |
| Bow | <±8 um | <±10um | <±15um |
| Warp | <15 um | <20 um | <25 um |
| Mitswe | Hapana | Kureba kwekuwedzera ≤ 3 mm | Kureba kwekuwedzera ≤10mm, |
| Makwara | ≤ 3 kukwenya, kuwedzera | ≤ 5 kukwenya, kuwedzera | ≤ 10 kukwenya, kuwedzera |
| Hex Plates | yepamusoro 6 ndiro, | yepamusoro 12 ndiro, | N/A, inoshandisika nzvimbo > 75% |
| Polytype Nzvimbo | Hapana | Kuwedzera nzvimbo ≤ 5% | Cumulative area ≤ 10% |
| Kusvibiswa | Hapana | ||
