PMN-PT Substrate
Tsanangudzo
PMN-PT crystal inozivikanwa neayo yakanyanya kukwirisa electromechanical coupling coefficient, high piezoelectric coefficient, high strain uye yakaderera dielectric kurasikirwa.
Properties
| Kuumbwa Kwemakemikari | ( PbMg 0.33 Nb 0.67)1-x: (PbTiO3)x |
| Chimiro | R3m, Rhombohedral |
| Lattice | a0 ~ 4.024Å |
| Melting Point (℃) | 1280 |
| Density (g/cm3) | 8.1 |
| Piezoelectric Coefficient d33 | >2000 pC/N |
| Dielectric Kurasikirwa | uye <0.9 |
| Composition | pedyo nemophotropic phase boundary |
PMN-PT Substrate Tsanangudzo
PMN-PT substrate inoreva firimu rakatetepa kana wafer yakagadzirwa nepiezoelectric zvinhu PMN-PT.Iyo inoshanda senheyo inotsigira kana hwaro hweakasiyana emagetsi kana optoelectronic zvishandiso.
Muchirevo chePMN-PT, substrate inowanzoita sandara yakaomeswa pamusoro payo iyo yakatetepa zvidimbu kana zvimiro zvinogona kukura kana kuiswa.PMN-PT substrates inowanzoshandiswa kugadzira michina yakaita sepiezoelectric sensors, actuators, transducers, uye magetsi anokohwa.
Aya ma substrates anopa nzvimbo yakagadzikana yekukura kana kuiswa kwezvimwe zvidimbu kana zvigadziro, zvichiita kuti piezoelectric properties ye PMN-PT ibatanidzwe mumidziyo.Mutete-firimu kana wafer fomu yePMN-PT substrates inogona kugadzira compact uye inoshanda michina inobatsira kubva kune yakanakisa piezoelectric zvinhu.
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