GaAs Substrate
Tsanangudzo
Gallium Arsenide (GaAs) iboka rakakosha uye rakakura III-Ⅴ komputa semiconductor, inoshandiswa zvakanyanya mumunda weoptoelectronics uye microelectronics.MaGaA anonyanya kukamurwa kuita mapoka maviri: semi-insulating GaAs uye N-mhando GaAs.Iyo semi-insulating GaAs inonyanya kushandiswa kugadzira maseketi akabatanidzwa ane MESFET, HEMT uye HBT zvimiro, ayo anoshandiswa mu radar, microwave uye millimeter wave kutaurirana, ekupedzisira-yepamusoro-kumhanya makomputa uye optical fiber kutaurirana.Iyo N-mhando GaAs inonyanya kushandiswa muLD, LED, pedyo infrared lasers, quantum zvakanaka high-simba lasers uye yakakwirira-inoshanda solar maseru.
Properties
| Crystal | Doped | Conduction Type | Concentration of Flows cm-3 | Kuwanda masendimita-2 | Kukura Nzira |
| GaAs | Hapana | Si | / | <5×105 | LEC |
| Si | N | >5×1017 | |||
| Cr | Si | / | |||
| Fe | N | ~2×1018 | |||
| Zn | P | >5×1017 |
GaAs Substrate Tsanangudzo
Iyo GaAs substrate inoreva substrate yakagadzirwa ne gallium arsenide (GaAs) crystal zvinhu.GaAs is a compound semiconductor inoumbwa ne gallium (Ga) uye arsenic (As) zvinhu.
MaGaAs substrates anowanzo shandiswa muminda yemagetsi uye optoelectronics nekuda kwehunhu hwavo hwakanaka.Zvimwe zvakakosha zveGaAs substrates zvinosanganisira:
1. High electron mobility: GaAs ine yakakwirira erekitironi kufamba kupfuura zvimwe zvinowanzoitwa semiconductor zvinhu zvakadai sesilicon (Si).Hunhu uhwu hunoita kuti maGaAs substrate aenderane nepamusoro-frequency high-power electronic equipment.
2. Direct band gap: GaAs ine gap rakananga bhendi, izvo zvinoreva kuti kubuda kwechiedza kunobudirira kunogona kuitika kana maerekitironi nemakomba zvinosangana zvakare.Hunhu uhwu hunoita kuti maGaAs akwanise kuita maoptoelectronic application senge light emitting diodes (LEDs) uye lasers.
3. Wide Bandgap: GaAs ine bandgap yakafara kupfuura silicon, inoita kuti ishande pakudziya kwepamusoro.Ichi chivakwa chinobvumira maGaAs-akavakirwa maturusi kuti ashande zvakanyanya munzvimbo dzepamusoro-tembiricha.
4. Mutsindo wakaderera: MaGaAs substrates anoratidza mwero wakaderera weruzha, zvichiita kuti ive yakakodzera kune yakaderera ruzha amplifiers uye zvimwe zvinonzwisisika zvemagetsi zvikumbiro.
MaGaAs substrates anoshandiswa zvakanyanya mumagetsi uye optoelectronic zvishandiso, zvinosanganisira high-speed transistors, microwave integrated circuits (ICs), photovoltaic masero, photon detectors, uye masero ezuva.
Aya ma substrates anogona kugadzirwa achishandisa nzira dzakasiyana dzakadai seMetal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE) kana Liquid Phase Epitaxy (LPE).Iyo chaiyo yekukura nzira inoshandiswa zvinoenderana nechishuwo chinodiwa uye nemhando yezvinodiwa zveGaAs substrate.
